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FQD5N60C - 600V N-Channel MOSFET

Description

FQD5N60C / FQU5N60C

Features

  • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A.
  • Low Gate Charge (Typ. 15 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested.
  • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

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FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C / FQU5N60C Features • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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