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FQD5P10 - 100V P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQD5P10
Manufacturer: Fairchild Semiconductor
File Size: 451.89 KB
Datasheet: FQD5P10_FairchildSemiconductor.pdf
Description: 100V P-Channel MOSFET

FQD5P10 Product details

Description

This P-Channel enhancement mode power.

Features

-3.6 A, -100 V, RDS(on) = 1.05 (Max. )@ VGS = -10 V, ID = 1.8 A.
Low Gate Charge (Typ. 6.3 nC).
Low Crss (Typ. 18 pF).
100% avalanche tested D G G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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100V P-Channel MOSFET Fairchild Semiconductor

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