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FQD6N40C - 400V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (T.

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Full PDF Text Transcription

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FQD6N40C / FQU6N40C QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 4.5A, 400V, RDS(on) = 1.
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