FQD6N60C
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V
- Low gate charge ( typical 16 nC )
- Low Crss ( typical 7 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
