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FQD6N60C - 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V.
  • Low gate charge ( typical 16 nC ).
  • Low Crss ( typical 7 pF).
  • Fast switching.
  • 100 % avalanche tested www. DataSheet4U. com.
  • Improved dv/dt capability ®.

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Full PDF Text Transcription

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FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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