Datasheet Details
| Part number | FQD7N10L |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 550.00 KB |
| Description | 100V LOGIC N-Channel MOSFET |
| Datasheet |
 FQD7N10L Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirments allowing direct operation from logic drives D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter.