FQH35N40 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply,...
FQH35N40 Key Features
- 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V
- Low gate charge ( typical 110 nC)
- Low Crss ( typical 65 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability