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FQH35N40 - MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V.
  • Low gate charge ( typical 110 nC).
  • Low Crss ( typical 65 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability July 2005 QFET®.

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Datasheet preview – FQH35N40

Datasheet Details

Part number FQH35N40
Manufacturer Fairchild Semiconductor
File Size 694.74 KB
Description MOSFET
Datasheet download datasheet FQH35N40 Datasheet
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FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
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