FQH35N40 Datasheet | Fairchild Semiconductor

FQH35N40 400V N-Channel MOSFET 400V N-Channel MOSFET Features - 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V - Low gate charge ( typical 110 nC) - Low Crss ( typical 65 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply,...