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FQH35N40 - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V.
  • Low gate charge ( typical 110 nC).
  • Low Crss ( typical 65 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability July 2005 QFET®.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.