Datasheet Details
| Part number | FQH44N10_F133 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 910.33 KB |
| Description | MOSFET |
| Datasheet |
 FQH44N10_F133 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V.
- Low gate charge ( typical 48 nC).
- Low Crss ( typical 85 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating D G GD S TO-247 FQH Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-S.