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FQH44N10_F133 - MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V.
  • Low gate charge ( typical 48 nC).
  • Low Crss ( typical 85 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating D G GD S TO-247 FQH Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-S.

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Datasheet Details

Part number FQH44N10_F133
Manufacturer Fairchild Semiconductor
File Size 910.33 KB
Description MOSFET
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FQH44N10_F133 FQH44N10_F133 100V N-Channel MOSFET Octorber 2008 QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 48A, 100V, RDS(on) = 0.
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