FQH8N100C Datasheet - Fairchild Semiconductor

MOSFET

FQH8N100C Features

* 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 53 nC)

* Low Crss (Typ. 16 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC =

FQH8N100C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQH8N100C Datasheet (1.11 MB)

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Datasheet Details

Part number:

FQH8N100C

Manufacturer:

Fairchild Semiconductor

File Size:

1.11 MB

Description:

Mosfet.

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FQH8N100C MOSFET Fairchild Semiconductor

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FQH8N100C Features

FQH8N100C General Description

Datasheet Details

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