FQI10N20C - 200V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI10N20C
Manufacturer	Fairchild Semiconductor
File Size	608.82 KB
Description	200V N-Channel MOSFET
Datasheet	FQI10N20C Datasheet
Additional preview pages of the FQI10N20C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

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Published: Apr 1, 2005 |