FQI10N20L Datasheet PDF - Fairchild Semiconductor 200V LOGIC N-Channel MOSFET Specs

FQI10N20L - 200V LOGIC N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parame.

Datasheet Details

Part number	FQI10N20L
Manufacturer	Fairchild Semiconductor
File Size	574.05 KB
Description	200V LOGIC N-Channel MOSFET
Datasheet	FQI10N20L Datasheet
Additional preview pages of the FQI10N20L datasheet.

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Full PDF Text Transcription

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FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. TM Features • • • • • • • 10A, 200V, RDS(on) = 0.

Published: Apr 1, 2005 |