FQI10N20L Datasheet | Fairchild Semiconductor

FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. Features - - - - - - - 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 n C) Low Crss ( typical 14 p F) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...