Datasheet Summary
FQB11P06 / FQI11P06
May 2001
QFET
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
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- -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10...