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FQI11P06 Datasheet, Fairchild Semiconductor

FQI11P06 Datasheet, Fairchild Semiconductor

FQI11P06

datasheet Download (Size : 660.81KB)

FQI11P06 Datasheet

FQI11P06 mosfet equivalent, 60v p-channel mosfet.

FQI11P06

datasheet Download (Size : 660.81KB)

FQI11P06 Datasheet

Features and benefits


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* -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avala.

Application

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQI11P06 Page 1 FQI11P06 Page 2 FQI11P06 Page 3

TAGS

FQI11P06
60V
P-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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