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FQI11P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQI11P06
Manufacturer: Fairchild Semiconductor
File Size: 660.81 KB
Datasheet: FQI11P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

FQI11P06 Product details

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

-11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !.
▶ ▲.
S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Volt.

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60V P-Channel MOSFET Fairchild Semiconductor

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