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Fairchild Semiconductor Electronic Components Datasheet

FQI140N03L Datasheet

30V LOGIC N-Channel MOSFET

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FQB140N03L / FQI140N03L
30V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
Features
• 140A, 30V, RDS(on) = 0.0045@VGS = 10 V
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
DD
!
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
FQB140N03L / FQI140N03L
30
140
99
490
± 20
710
140
18.0
7.0
3.75
180
1.2
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 0.84 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001


Fairchild Semiconductor Electronic Components Datasheet

FQI140N03L Datasheet

30V LOGIC N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250µ A
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30 --
-- V
-- 0.03
-- V/°C
-- --
1 µA
-- --
10 µA
-- -- 100 nA
--
--
-100
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
VGS = 10 V, ID = 70 A
-- 0.0038 0.0045
VGS = 5 V, ID =70 A
-- 0.005 0.006
VDS = 15 V, ID = 70 A (Note 4) --
85
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 3400 4420
-- 2090 2720
-- 580
755
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 15 V, ID = 70 A,
RG = 25
(Note 4, 5)
VDS = 24 V, ID = 140 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
60
770
25
250
73
29.5
38.5
130
1500
60
510
95
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 490 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A
-- --
1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 140 A,
-- 70
-- ns
dIF / dt = 100 A/µs
(Note 4)
--
105
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36µH, IAS = 140A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 140A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001


Part Number FQI140N03L
Description 30V LOGIC N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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