FQI140N03L Datasheet | Fairchild Semiconductor

FQB140N03L / FQI140N03L FQB140N03L / FQI140N03L 30V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. Features - 140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V - Low gate charge ( typical 73 n C) - Low Crss ( typical 580 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - 175°C maximum junction temperature rating ! D2-PAK FQB Series I2-PAK FQI Series " !" G! "...