FQI140N03L
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V
- Low gate charge ( typical 73 nC)
- Low Crss ( typical 580 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating DD ! GS D2-PAK FQB Series GDS I2-PAK FQI Series " !" G! " " ! S
