FQI28N15

The FQI28N15 is 150V N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Part number	FQI28N15
Manufacturer	Fairchild Semiconductor
File Size	627.82 KB
Description	150V N-Channel MOSFET
Datasheet	FQI28N15_FairchildSemiconductor.pdf
Additional preview pages of the FQI28N15 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (.

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Published: Apr 1, 2005 |