FQI28N15 Datasheet | Fairchild Semiconductor

FQB28N15 / FQI28N15 December 2000 QFET FQB28N15 / FQI28N15 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supplies. D Features - - - - - - - 28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 n C) Low Crss ( typical 50 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...