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*
*
*
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* 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQI3N25

FQI3N40

FQI3N80

FQI3N90

FQI30N06

FQI33N10L

FQI34N20

FQI34N20L

FQI3P20

FQI3P50

FQI10N20

FQI10N20C

FQI10N20L