Datasheet Specifications
- Part number
- FQI4N80
- Manufacturer
- Fairchild Semiconductor
- File Size
- 659.86 KB
- Datasheet
- FQI4N80_FairchildSemiconductor.pdf
- Description
- 800V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.
FQI4N80 Features
* 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !
FQI4N80 Distributors
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