*
*
*
*
*
*
* 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanc.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
*
*

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQI50N06

FQI50N06L

FQI55N06

FQI55N10

FQI5N15

FQI5N20

FQI5N20L

FQI5N30

FQI5N40

FQI5N50

FQI5N50C

FQI5N60

FQI5N60C