FQI55N10 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D Features - - - - - - - 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 n C) Low Crss ( typical 130 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB55N10 / FQI55N10 100 55 38.9 220 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - 1100 55 15.5 6.0 3.75 155 1.03 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics...