FQI55N10 Datasheet 100V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQI55N10 100v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQI55N10
Manufacturer	Fairchild (now onsemi)
File Size	671.53 KB
Description	100V N-Channel MOSFET
Download	FQI55N10 Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQB55N10 / FQI55N10 August 2000 QFET FQB55N10 / FQI55N10 100V N-Channel.

Key Features

55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

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