FQI58N08 Datasheet PDF (N-Channel MOSFET) | Download Fairchild Semiconductor FQI58N08

FQI58N08 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

Datasheet Details

Part number	FQI58N08
Manufacturer	Fairchild Semiconductor
File Size	660.23 KB
Description	N-Channel MOSFET
Datasheet	FQI58N08 Datasheet
Additional preview pages of the FQI58N08 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features • • • • • • • 57.5A, 80V, RDS(on) = 0.

Published: Dec 30, 2006 |