FQI5N50C Key Features
- 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avala
- Part: FQI5N50C
- Manufacturer: Fairchild (official site)
- Size: 660.34 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQI5N50 | 500V N-Channel MOSFET |
| FQI5N15 | 150V N-Channel MOSFET |
| FQI5N20 | 200V N-Channel MOSFET |
| FQI5N20 | 200V LOGIC N-Channel MOSFET |
| FQI5N20L | 200V LOGIC N-Channel MOSFET |
FQI5N50C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...