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FQI5N60C - 600V N-channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max. ) @VGS = 10 V, ID = 2.1 A.
  • Low Gate Charge (Typ. 15 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω November 2013 Features • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS I2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.