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FQI5N60C - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max. ) @VGS = 10 V, ID = 2.1 A.
  • Low Gate Charge (Typ. 15 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested.

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Datasheet preview – FQI5N60C

Datasheet Details

Part number FQI5N60C
Manufacturer ON Semiconductor
File Size 930.01 KB
Description N-Channel MOSFET
Datasheet download datasheet FQI5N60C Datasheet
Additional preview pages of the FQI5N60C datasheet.

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Full PDF Text Transcription

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FQI5N60C — N-Channel QFET® MOSFET FQI5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Features • 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS I2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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