| Part Number | FQI5N60C |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A * Low Gate Charge (Typ. 15 nC) * Low Crss (Typ. 6.5 pF) * 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced M. |