FQI5N60 Datasheet PDF - Fairchild Semiconductor 600V N-Channel MOSFET Specs

FQI5N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 1.

Datasheet Details

Part number	FQI5N60
Manufacturer	Fairchild Semiconductor
File Size	554.00 KB
Description	600V N-Channel MOSFET
Datasheet	FQI5N60 Datasheet
Additional preview pages of the FQI5N60 datasheet.

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Full PDF Text Transcription

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FQB5N60 / FQI5N60 April 2000 QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.

Published: Apr 1, 2005 |