FQN1N60C - N-Channel QFET MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQN1N60C
Manufacturer	Fairchild ↗ Semiconductor
File Size	754.27 KB
Description	N-Channel QFET MOSFET
Datasheet	FQN1N60C-FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

0.30 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.15 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 3.5 pF).
100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

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Published: Nov 14, 2014 |