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Fairchild Semiconductor Electronic Components Datasheet

FQP10N60CF Datasheet

N-Channel MOSFET

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FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
February 2007
FRFET TM
Features
• 9A, 600V, RDS(on) = 0.8@VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings
GD S
TO-220F
FQPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FQP10N60CF FQPF10N60CF
600
9.0 9.0 *
5.7 5.7 *
36 36 *
± 30
583
9.0
16.9
4.5
169 50
1.35 0.4
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74 2.5
62.5 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQP10N60CF Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQP10N60CF
FQPF10N60CF
Device
FQP10N60CF
FQPF10N60CF
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.5 A
VDS = 40 V, ID = 4.5 A
(Note 4)
2.0
--
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 9.0A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 9.0A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9.0A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.2mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
-- --
0.7 --
-- 10
-- 100
-- 100
-- -100
-- 4.0
0.61 0.8
8.0 --
1570
166
18
2040
215
24
23
69
144
77
44
6.7
18.5
55
150
300
165
57
--
--
-- 9.0
-- 36
-- 1.4
90 --
0.3 --
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
FQP10N60CF / FQPF10N60CF Rev. A
2
www.fairchildsemi.com


Part Number FQP10N60CF
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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