FQP10N60CF Datasheet | Fairchild Semiconductor

Features - 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V - Low gate charge ( typical 44 n C) - Low Crss ( typical 18 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. G G DS TO-220 FQP Series GD S TO-220F FQPF Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) .. Parameter FQP10N60CF FQPF10N60CF 600 9.0 5.7 (Note 1) Units V A A A V m J A m J V/ns - 5.7 - 36 - ± 30 - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) 583 9.0 16.9 4.5 169 1.35 -55 to +150 300 50 0.4 W W/°C °C...