FQP12N60C datasheet, mosfet equivalent, Fairchild Semiconductor

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FQP12N60C Features and benefits

* 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 21 pF)
* 100% Avalanche Tested D GDS TO-22.

FQP12N60C Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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