Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V.
- Low gate charge ( typical 41 nC).
- Low Crss ( typical 68 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
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TO-220
FQP Series
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TO-220F
FQPF Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Curr.
FQP16N25C Datasheet
