* 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V
* Low gate charge ( typical 41 nC)
* Low Crss ( typical 68 pF)
* Fast switching
* 100% avalanche tested

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQP16N25

FQP16N15

FQP10N20

FQP10N20C

FQP10N20L

FQP10N50CF

FQP10N60

FQP10N60C

FQP10N60CF

FQP10N65

FQP11N40

FQP11N40C

FQP11N50CF