FQP2N60C mosfet equivalent, 600v n-channel mosfet.
* 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A
* Low Gate Charge (Typ. 8.5 nC)
* Low Crss (Typ. 4.3 pF)
* 100% Avalanche Tested
D
GDS
TO-2.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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