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FQP32N20C - N-Channel QFET MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 28 A, 200 V, RDS(on) = 82 mΩ (Max. ) @ VGS = 10 V, ID = 14 A.
  • Low Gate Charge (Typ. 82.5 nC).
  • Low Crss (Typ. 185 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription

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FQP32N20C / FQPF32N20C — N-Channel QFET® MOSFET FQP32N20C / FQPF32N20C N-Channel QFET® MOSFET 200 V, 28 A, 82 mΩ November 2013 Features • 28 A, 200 V, RDS(on) = 82 mΩ (Max.) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ. 82.5 nC) • Low Crss (Typ. 185 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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