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FQP3N80C Key Features

  • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
  • Low Gate Charge (Typ. 13 nC)
  • Low Crss (Typ. 5.5 pF)
  • 100% Avalanche Tested
  • Continuous (TC = 25oC) -Continuous (TC = 100oC)
  • Pulsed
  • Derate above 25oC
  • Drain current limited by maximum junction temperature
  • 55 to +150
  • N-Channel QFET® MOSFET

Other FQP3N80C Datasheets

Manufacturer Part Number Description
onsemi Logo onsemi FQP3N80C N-Channel MOSFET

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FQP3N80C Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...