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FQP3N80C Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C.

General Description

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 3.0 A, 800 V, RDS(on) = 4.8 W (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested DATA SHEET www. onsemi. com TO.
  • 220.
  • 3LD CASE 340AT TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT N.

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