FQP3N80C
FQP3N80C is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 3.0 A, 800 V, RDS(on) = 4.8 W (Max.) @ VGS = 10 V,
ID = 1.5 A
- Low Gate Charge (Typ. 13 n C)
- Low Crss (Typ. 5.5 p F)
- 100% Avalanche Tested
DATA SHEET .onsemi.
TO- 220- 3LD CASE 340AT
TO- 220 Fullpack, 3- Lead /
TO- 220F- 3SG CASE 221AT
N- CHANNEL MOSFET D
MARKING DIAGRAM
FQP(F) 3N80C AYWWZZ
FQP(F)3N80C A YWW ZZ
= Specific Device Code = Assembly Location = Date Code (Year & Week) = Assembly Lot
ORDERING INFORMATION
Device FQP3N80C
FQPF3N80C
Package TO- 220- 3LD
TO- 220 Fullpack
Shipping
1,000 Units / Tube
1,000 Units / Tube
© Semiconductor ponents Industries, LLC, 2003
January, 2024
- Rev. 3
Publication Order Number: FQPF3N80C/D
FQP3N80C, FQPF3N80C
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
FQPF3N80C
Unit
VDSS Drain- Source Voltage
Drain...
