FQP3N80C - N-Channel MOSFET

onsemi

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

3.0 A, 800 V, RDS(on) = 4.8 W (Max. ) @ VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 5.5 pF).
100% Avalanche Tested DATA SHEET www. onsemi. com TO.
220.
3LD CASE 340AT TO.
220 Fullpack, 3.
Lead / TO.
220F.
3SG CASE 221AT N.

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FQP3N80C n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQP3N80C
Manufacturer	onsemi
File Size	425.84 KB
Description	N-Channel MOSFET
Datasheet	FQP3N80C Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 3.0 A, 800 V, RDS(on) = 4.8 W (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested DATA SHEET www.onsemi.