FQP3N80C Datasheet | Fairchild Semiconductor

Features - 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A - Low Gate Charge (Typ. 13 n C) - Low Crss (Typ. 5.5 p F) - 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-220 GDS TO-220F MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS IDM VGSS EAS IAR EAR dv/dt Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient,...