FQP4N20L datasheet, mosfet equivalent, Fairchild Semiconductor

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FQP4N20L Features and benefits

* 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A
* Low Gate Charge (Typ. 4.0 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested D GDS .

FQP4N20L Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

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