FQP7N80C mosfet equivalent, n-channel mosfet.
* 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A
* Low Gate Charge (Typ. 27 nC)
* Low Crss (Typ. 10 pF)
* 100% Avalanche Tested
D
GDS
TO.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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