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FQP7N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP7N10 December 2000 QFET FQP7N10 100V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes.

These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Key Features

  • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) D.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQP7N10L 100V LOGIC N-Channel MOSFET
FQP7N20 200V N-Channel MOSFET
FQP7N20L 200V LOGIC N-Channel MOSFET
FQP7N40 400V N-Channel MOSFET
FQP7N60 600V N-Channel MOSFET
FQP7N65C 650V N-Channel MOSFET
FQP7N80 800V N-Channel MOSFET
FQP7N80C N-Channel MOSFET
FQP70N08 80V N-Channel MOSFET
FQP70N10 100V N-Channel MOSFET

FQP7N10 Distributor