Datasheet Details
| Part number | FQPF11N50CF |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 816.64 KB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 FQPF11N50CF Datasheet
|
|
|
General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 11 A, 500 V, RDS(on) = 550 mΩ (Max. ) @ VGS = 10 V, ID = 5.5 A.
- Low Gate Charge (Typ. 43 nC).
- Low Crss (Typ. 20 pF).
- 100% Avalanche Tested.
- Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanc.