FQPF11N50CF Key Features
- 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V, ID = 5.5 A
- Low Gate Charge (Typ. 43 nC)
- Low Crss (Typ. 20 pF)
- 100% Avalanche Tested
- Fast Recovery Body Diode
- Part: FQPF11N50CF
- Manufacturer: Fairchild (official site)
- Size: 816.64 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQPF11N40 | 400V N-Channel MOSFET |
| FQPF11N40C | 400V N-Channel MOSFET |
| FQPF11P06 | 60V P-Channel MOSFET |
| FQPF10N20 | 200V N-Channel MOSFET |
| FQPF10N20C | 200V N-Channel MOSFET |
FQPF11N50CF Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...