Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Features
- -8.6 A, -60 V, RDS(on)=175 mΩ(Max. ) @VGS=-10 V, ID=-4.3 A.
- Low Gate Charge (Typ. 13 nC).
- Low Crss (Typ. 45 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
S
!
GD S
TO-220F
G!.
- ▶▲.
- !
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Cur.
FQPF11P06 Datasheet
