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FQPF11N50CF - 500V N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 11 A, 500 V, RDS(on) = 550 mΩ (Max. ) @ VGS = 10 V, ID = 5.5 A.
  • Low Gate Charge (Typ. 43 nC).
  • Low Crss (Typ. 20 pF).
  • 100% Avalanche Tested.
  • Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQPF11N50CF — N-Channel QFET® FRFET® MOSFET FQPF11N50CF N-Channel QFET® FRFET® MOSFET 500 V, 11 A, 550 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ.