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FQPF15P12 - 120V P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • -15 A, -120 V, RDS(on) = 0.2 Ω (Max. ) @ VGS=-10 V, ID = -7.5 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 110 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous.

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Datasheet Details

Part number FQPF15P12
Manufacturer Fairchild Semiconductor
File Size 938.29 KB
Description 120V P-Channel MOSFET
Datasheet download datasheet FQPF15P12 Datasheet
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FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET August 2014 FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET -120 V, -15 A, 0.2 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ.
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