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FQPF3N80C Datasheet 800V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FQPF3N80C datasheet PDF. This datasheet also includes the FQP3N80C variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FQP3N80C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.

Key Features

  • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested June 2014.