FQPF3N80C Datasheet | onsemi

Description This N- Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features - 3.0 A, 800 V, RDS(on) = 4.8 W (Max.) @ VGS = 10 V, ID = 1.5 A - Low Gate Charge (Typ. 13 n C) - Low Crss (Typ. 5.5 p F) - 100% Avalanche Tested DATA SHEET .onsemi. TO- 220- 3LD CASE 340AT TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE 221AT N- CHANNEL MOSFET D MARKING DIAGRAM FQP(F) 3N80C AYWWZZ FQP(F)3N80C A YWW ZZ = Specific Device Code = Assembly Location = Date Code (Year & Week) = Assembly Lot ORDERING INFORMATION Device FQP3N80C Package TO- 220- 3LD TO- 220 Fullpack Shipping 1,000 Units / Tube 1,000 Units / Tube © Semiconductor ponents Industries, LLC, 2003 January, 2024 - Rev. 3 Publication Order Number: FQPF3N80C/D FQP3N80C, FQPF3N80C MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter FQP3N80C Unit VDSS Drain- Source Voltage Drain Current - Continuous (TC =...