FQPF3N80C - N-Channel MOSFET

onsemi

Download the FQPF3N80C datasheet PDF. This datasheet also covers the FQP3N80C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

3.0 A, 800 V, RDS(on) = 4.8 W (Max. ) @ VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 5.5 pF).
100% Avalanche Tested DATA SHEET www. onsemi. com TO.
220.
3LD CASE 340AT TO.
220 Fullpack, 3.
Lead / TO.
220F.
3SG CASE 221AT N.

📥 Download Datasheet

FQPF3N80C n-channel mosfet by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (FQP3N80C-onsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	FQPF3N80C
Manufacturer	onsemi
File Size	425.84 KB
Description	N-Channel MOSFET
Datasheet	FQPF3N80C Datasheet

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Other Datasheets by onsemi

Part Number	Description
FQP3N80C	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 3.0 A, 800 V, RDS(on) = 4.8 W (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested DATA SHEET www.onsemi.