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FQPF3N80C - 800V N-Channel MOSFET

Download the FQPF3N80C datasheet PDF. This datasheet also covers the FQP3N80C variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested June 2014.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP3N80C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF3N80 800V N-Channel MOSFET
FQPF3N25 250V N-Channel MOSFET
FQPF3N30 300V N-Channel MOSFET
FQPF3N40 400V N-Channel MOSFET
FQPF3N60 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.