FQPF47P06 - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF47P06
Manufacturer	Fairchild ↗ Semiconductor
File Size	761.59 KB
Description	P-Channel MOSFET
Datasheet	FQPF47P06-FairchildSemiconductor.pdf

P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU

-30 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-15 A.
Low Gate Charge (Typ. 84 nC).
Low Crss (Typ. 320 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and.

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Published: May 21, 2014 |