| Part Number | FQPF47P06 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r.
* *30 A, *60 V, RDS(on) = 26 mW (Max.) @ VGS = *10 V, ID = *15 A * Low Gate Charge (Typ. 84 nC) * Low Crss (Typ. 320 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS *60 V RDS(ON) MAX 26 mW @ *10 V S ID MAX *30 A G D P *Channel MOSFET GDS . |
FQPF47P06 Datasheet PDF
The FQPF47P06 is a P-Channel MOSFET.
| Part Number | FQPF47P06 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
P-Channel QFET® MOSFET
FQPF47P06 / FQPF47P06YDTU
Features
• -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • .
* -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A * Low Gate Charge (Typ. 84 nC) * Low Crss (Typ. 320 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe an. |