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FQPF47P06YDTU - P-Channel MOSFET

Download the FQPF47P06YDTU datasheet PDF. This datasheet also covers the FQPF47P06 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU

Key Features

  • -30 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-15 A.
  • Low Gate Charge (Typ. 84 nC).
  • Low Crss (Typ. 320 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQPF47P06-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FQPF47P06YDTU P-Channel MOSFET ON Semiconductor
FQPF47P06 P-Channel MOSFET ON Semiconductor
FQPF4N60 4A N-Channel MOSFET Oucan Semi
FQPF4N60C N-Channel MOSFET HAOHAI
FQPF4N65 4A N-Channel MOSFET Oucan Semi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF47P06 P-Channel MOSFET
FQPF44N08 80V N-Channel MOSFET
FQPF44N10 100V N-Channel MOSFET
FQPF45N15V2 150V N-Channel MOSFET
FQPF46N15 150V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ Description P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.