Datasheet Summary
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
March 2013
-60 V, -30 A, 26 mΩ
Description
P-Channel QFET® MOSFET
FQPF47P06 / FQPF47P06YDTU
Features
- -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 320 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power...
