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FQPF47P06YDTU - P-Channel MOSFET

Download the FQPF47P06YDTU datasheet PDF. This datasheet also covers the FQPF47P06 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 30 A,.
  • 60 V, RDS(on) = 26 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 15 A.
  • Low Gate Charge (Typ. 84 nC).
  • Low Crss (Typ. 320 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating DATA SHEET www. onsemi. com VDSS.
  • 60 V RDS(ON) MAX 26 mW @.
  • 10 V S ID MAX.
  • 30 A G D P.
  • Channel MOSFET GDS TO.
  • 220F TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQPF47P06-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FQPF47P06YDTU P-Channel MOSFET Fairchild Semiconductor
FQPF47P06 P-Channel MOSFET Fairchild Semiconductor
FQPF44N08 80V N-Channel MOSFET Fairchild Semiconductor
FQPF44N10 100V N-Channel MOSFET Fairchild Semiconductor
FQPF45N15V2 150V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FQPF47P06 P-Channel MOSFET
FQPF13N50C N-Channel MOSFET
FQPF27P06 P-Channel MOSFET
FQPF3N50C 500V N-Channel MOSFET
FQPF7P20 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, QFET) -60 V, -30 A, 26 mW FQPF47P06, FQPF47P06YDTU Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −30 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.