Description
This P
using onsemi’s proprietary planar stripe and DMOS technology.
state resistance, and to provide superior switching performance and high avalanche energy s
Features
- 30 A,.
- 60 V, RDS(on) = 26 mW (Max. ) @ VGS =.
- 10 V, ID =.
- 15 A.
- Low Gate Charge (Typ. 84 nC).
- Low Crss (Typ. 320 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating
DATA SHEET www. onsemi. com
VDSS.
- 60 V
RDS(ON) MAX 26 mW @.
- 10 V
S
ID MAX.
- 30 A
G
D P.
- Channel MOSFET
GDS
TO.
- 220F
TO.
- 220 Fullpack, 3.
- Lead / TO.
- 220F.
- 3SG CASE 221A.
FQPF47P06 Datasheet
