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FQPF47P06 - P-Channel MOSFET

General Description

P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU

Key Features

  • -30 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-15 A.
  • Low Gate Charge (Typ. 84 nC).
  • Low Crss (Typ. 320 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ Description P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.