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* 35A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQPF50N06

FQPF50N06L

FQPF55N10

FQPF5N15

FQPF5N20

FQPF5N20L

FQPF5N30

FQPF5N40

FQPF5N50

FQPF5N50C

FQPF5N50CF

FQPF5N60

FQPF5N60C